Accurate leakage current models for MOSFET nanoscale devices
نویسندگان
چکیده
منابع مشابه
Analysis of Leakage Current Calculation for Nanoscale MOSFET and FinFET
This paper presents logic level estimators of leakage current for nanoscale digital standard cell circuits. Here the proposed estimation model is based on the characterization of internal node voltages of cells and the characterization of leakage current in a single Field-Effect Transistor (FET). Finally the estimation model allowed direct implementation of supply voltage variation impact on le...
متن کاملModeling of Leakage Current Mechanisms in Nanoscale DG MOSFET and its Application to Low Power SRAM Design
Double-Gate (DG) MOSFET has emerged as one of the most promising devices for logic and memory circuit design in sub 10nm regime. In this paper, we investigate the gate-to-channel leakage, EDT, BTBT and sub-threshold leakage for DG MOSFET. Simulations are performed using 2D Poisson-Schrödinger simulator with tight-binding Green’s function approach. Then we analyze the effect of parameter variati...
متن کاملMonitoring of Leakage Current for Composite Insulators and Electrical Devices
Electrical insulation is an important part of all electrical systems. The level of insulation safety provided by an insulator depends on the amount of leakage current flowing on its surface. Actually increased leakage current causes a part of high voltage to appear at dead end of insulator. This voltage may sometimes be of order of 1000 to 5000 Volts depending upon weather conditions. Such a le...
متن کاملTCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFET
Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has b...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Electrical and Computer Engineering (IJECE)
سال: 2020
ISSN: 2088-8708,2088-8708
DOI: 10.11591/ijece.v10i3.pp2313-2321